Method of enhancing clear field phase shift masks by adding parallel line to phase 0 region
AssigneeAdvanced Micro Devices, Inc.
InventorsTodd P. Lukanc, Christopher A. Spence
Life of this patent
Estimating the term…
Abstract
A technique in which a boundary region is added to the outside parallel edge of phase zero (0) pattern defining polygons. This technique can reduce the need for optical proximity correction (OPC) and improve the manufacturability and patterning process window for integrated circuits. The technique can also set the width of both phase 0 and phase 180 polygons to specific sizes, making OPC easier to assign.
Claims22
A method of designing a phase shifting mask, the method comprising:
- identifying edges of a first phase region of a phase shifting mask, the first phase region being located proximate a critical poly region and the identified edges not being edges of the first phase region adjacent to the critical poly region;
- expanding one side of the identified edges opposite and parallel to the side of the first phase region proximate the critical poly region to define a line;
- and
- forming an opaque line in the line along the edge of the first phase region opposite and parallel to the side of the first phase region proximate the critical poly region.
A method of generating phase shifting patterns to improve the patterning of gates or other layers, the method comprising:
- defining critical gate areas;
- creating phase areas on either side of the critical gate areas;
- assigning opposite phase polarities to the phase areas on either side of the critical gate areas;
- enhancing phase areas with assigned phase polarities;
- defining break regions where phase transitions are likely to occur;
- generating polygons to define other edges and excluding the defined break regions;
- constructing a boundary region outside of first phase regions to form a chrome border;
- and
- constructing a boundary line along an edge of second phase regions, the edge being opposite and parallel to a side of the second phase region proximate the critical gate areas.
A method of enhancing clear field phase shift masks with a boundary line along outside edges of phase 0 regions, the method comprising:
- assigning phase polarities to phase areas, the phase areas including first phase areas and second phase areas;
- defining edges of the assigned phase areas;
- establishing a first boundary around the defined edges of the first phase regions;
- and
- forming an opaque line along an edge of the second phase regions, the edge being opposite and parallel to a side of the second phase regions proximate a critical poly region.
A mask configured for use in an integrated circuit manufacturing process, the mask comprising:
- a critical poly section defined by first edges of a phase zero region and first edges of a phase 180 region;
- a chrome boundary region located outside second edges of the phase 180 region, the second edges of the phase 180 region being different than the first edges of the phase 180 region, wherein the chrome boundary region includes an opaque material;
- and
- an opaque line located on a parallel edge of the phase zero region, the parallel edge being different than the first edges of the phase zero region.
Dependencies are inferred from the claim text.