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US 6,674,661 B1Granted
Dense metal programmable ROM with the terminals of a programmed memory transistor being shorted together
AssigneeArtisan Components, Inc.
InventorScott T. Becker
Life of this patent
Estimating the term…
Abstract
A metal programmable ROM includes a memory cell array having a depth defined by a plurality of wordlines and a width defined by a plurality of bitlines. In addition, a group of memory cells are coupled between a bitline and a ground conection, with each memory cell in the memory cell group coupled to at least one other memory cell in the memory cell group. Finally, a programmed memory cell is defined by a memory cell transistor having its terminals shorted together.
Claims13
A metal programmable ROM, comprising:
- a group of memory cells, wherein each memory cell is connected to a corresponding wordline, and wherein each of the memory cells in the group of memory cells is interconnected between a single bitline connection and a ground conection;
- and
- a programmed memory cell associated with the group of memory cells, wherein the programmed memory cell includes a shorted transistor.
A metal programmable ROM, comprising:
- a group of memory cells, wherein each memory cell is connected to a corresponding wordline, and wherein each of the memory cells in the group of memory cells is interconnected between a single bitline connection and a ground conection;
- and
- a programmed memory cell associated with the group of memory cells, wherein the programmed memory cell includes a shorted transistor, and wherein read operations are performed by pulling a selected wordline coupled to a memory cell in the group of memory cells low, and asserting all other wordlines coupled to memory cells in the group of memory cells high.
A metal programmable ROM, comprising:
- a group of memory cells, wherein each memory cell is connected to a corresponding wordline, and wherein each of the memory cells in the group of memory cells is interconnected between a single bitline connection and a ground conection,
- wherein read operations are performed by pulling a selected wordline coupled to a memory cell in the group of memory cells low, and asserting all other wordlines coupled to memory cells in the group of memory cells high.
Dependencies are inferred from the claim text.