IC PMOS Schottky reverse bias protection structure
AssigneeTexas Instruments Incorporated
InventorsAlexander Noam Teutsch, Zbigniew Jan Lata, David John Baldwin, Ross E. Teggatz
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AssigneeTexas Instruments Incorporated
InventorsAlexander Noam Teutsch, Zbigniew Jan Lata, David John Baldwin, Ross E. Teggatz
Estimating the term…
The present invention relates to a reverse bias protection structure which comprises a PMOS transistor structure having a drain portion, a gate portion, a source portion and a backgate portion, wherein the gate portion is coupled to a first voltage potential, the source portion is selectively coupleable to a power supply, and the drain portion is selectively coupleable to a circuit needing power to be supplied thereto from the power supply. The reverse bias protection structure further comprises a Schottky diode structure having an anode coupled to the source portion of the PMOS transistor structure, and a cathode coupled to the backgate portion of the PMOS structure. Under forward bias conditions, the PMOS transistor conducts and exhibits a small voltage drop thereacross. Under reverse bias conditions, the PMOS transistor is off and the Schottky structure is reverse biased, thus preventing current through the protection structure.
A reverse bias protection structure, comprising:
A system for controlling a component receiving electrical energy, comprising:
A fan driver circuit, comprising:
Dependencies are inferred from the claim text.