Lateral components in power semiconductor devices
AssigneeSGS-Thomson Microelectronics S.A.
InventorsEric Bernier, Jean-Michel Simonnet
Life of this patent
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Abstract
A method for adjusting the gain or the sensitivity of a lateral component formed in the front surface of a semiconductor wafer, having a first conductivity type, includes not doping or overdoping, according to the first conductivity type, the back surface when it is desired to reduce the gain or sensitivity of the lateral component, and doping according to the second conductivity type, the back surface, when the gain or the sensitivity of the lateral component is to be increased.
Claims11
A lateral transistor or thyristor formed in a front surface of a low doped semiconductor substrate of a first conductivity type including, on a back surface of the substrate, a layer of a second conductivity type, wherein the layer of the second conductivity type increases the gain of the lateral transistor or thyristor.
A set of PN junction diodes that forms a transistor in a front surface of a semiconductor substrate of a first conductivity type, wherein a back surface of the substrate includes a highly doped region of the first conductivity type that decreases the gain of the transistor.
A semiconductor structure comprising:
- a substrate of a first conductivity type;
- and
- a doped region of a second conductivity type formed at a back surface of the substrate,
- wherein a lateral component is formed at a front surface of the semiconductor structure and the doped region increases the gain of the lateral component.
A semiconductor structure comprising:
- a substrate of a first conductivity type;
- and
- a doped region of a second conductivity type formed at a back surface of the substrate, the doped region extending substantially through one half of the substrate thickness,
- wherein a lateral component is formed at a front surface of the semiconductor structure.
A semiconductor structure comprising:
- a substrate of a first conductivity type;
- and
- a doped region of a second conductivity type formed at a back surface of the substrate, the doped region extending to a depth substantially equal to the depth of an insulating wall that extends from the back surface,
- wherein a lateral component is formed at a front surface of the semiconductor structure.
A semiconductor structure comprising:
- an n-type substrate;
- and
- a p-type doped region formed at a back surface of the substrate,
- wherein a lateral component is formed at a front surface of the semiconductor structure.
Dependencies are inferred from the claim text.