Semiconductor-on-insulator device with thermoelectric cooler on surface
AssigneeAdvanced Micro Devices, Inc.
InventorPhilip A. Fisher
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Abstract
A semiconductor-on-insulator (SOI) device includes a thermoelectric cooler on a back side of the device. The thermoelectric cooler is formed on a thinned portion of a deep bulk semiconductor layer of the SOI device. The thermoelectric device includes a plurality of pairs of opposite conductivity semiconductor material blocks formed on a metal layer deposited on the thinned portion. The thinning of the thinned portion may be accomplished in multiple etching steps of the deep silicon layer, such as a fast etching down to an etch stop and a slower, more controlled etch to the desired thickness for the thinned portion.
Claims18
A semiconductor device comprising:
- a surface semiconductor layer;
- a buried insulator layer below the surface semiconductor layer and in contact with the surface semiconductor layer;
- a deep semiconductor layer having a upper surface in contact with the buried insulator layer, the deep semiconductor layer having a thinned portion, the thinned portion having a back surface which is opposite the upper surface;
- and
- a thermoelectric cooler on the back surface of the thinned portion.
A semiconductor device comprising:
- a surface semiconductor layer;
- a buried insulator layer below the surface semiconductor layer and in contact with the surface semiconductor layer;
- a deep semiconductor layer having a upper surface in contact with the buried insulator layer, the deep semiconductor layer having a thinned portion, the thinned portion having a back surface which is opposite the upper surface;
- and
- cooling means on the back surface of the thinned portion.
Dependencies are inferred from the claim text.