Semiconductor power component and a corresponding manufacturing method

A semiconductor power component, comprising:

• a rear-side anode contact;
• a rear-side emitter region of a first conductivity type connected to the rear-side anode contact;
• a drift region connected to the rear-side emitter region and partially extending to a front-side surface, the drift region including a first drift region of a second conductivity type, a second drift region of the second conductivity type, and a third drift region of the first conductivity type, the first drift region being a buried region, the second drift region connecting the front-side surface to the first drift region, the third drift region connecting the front-side surface to the first drift region;
• a front-side MOS control structure including a source region of the second conductivity type introduced into the drift region and a body region of the first conductivity type introduced into the drift region, and further including a control contact arranged to be insulated above the body region and above a part of the drift region that borders on the body region and extends to the front-side surface;
• and
• a front-side cathode contact connected to the source region and the body region,
• wherein a degree of compensation determinable from the second drift region and the third drift region is greater than one and has a maximum in an area of a side of the third drift region that is facing away from the front surface, the third drift region being arranged to border on the body region.