Bipolar transistor
AssigneeQinetiq Limited
InventorTimothy J Phillips
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Abstract
A bipolar transistor having base and collector regions of narrow bandgap semiconductor material and a minority-carrier excluding base contact has a base doping level greater than 1017 cm−3. The transistor has a greater dynamic range, greater AC voltage and power gain-bandwidth products and a lower base access resistance than prior art narrow band-gap bipolar transistors.
Claims5
A bipolar transistor having emitter and collector regions arranged to extract minority carriers from the base region, a structure for counteracting entry of minority carriers into the base region via the base contact, the base region having a band gap less than 0.5 eV and wherein the base region has a doping level greater than 1017 cm−3.
Dependencies are inferred from the claim text.