Method of forming a gate electrode contact spacer for a vertical DRAM device

A method of providing replacement spacers, said replacement spacers proximate a semiconductor device formed in a trench defined in a semiconductor substrate, said semiconductor device having topographical features and temporary spacers adjacent the topographical features, the topographical features including top surfaces and vertical surfaces that extend above the top surface of said semiconductor substrate, and said temporary spacers filling said trench between said vertical surface and the sidewalls of said trench, the method comprising the steps of:

• removing the temporary spacers that fill said trench;
• re-filling said trench and covering said topographical features by depositing a permanent spacer material over the semiconductor device;
• selectively removing the permanent spacer material from the topographical feature top surfaces, extending above said semiconductor substrate;
• and
• leaving permanent spacers between said vertical surfaces and said sidewalls of said trench and adjacent vertical surfaces of the topographical features extending above said semiconductor substrate.