US 6,673,671 B1Granted

Semiconductor device, and method of manufacturing the same

AssigneeRenesas Technology Corp.

InventorsHiroaki Nishimura, Tomoharu Mametani, Yukihiro Nagai, Akinori Kinugasa, Takeshi Kishida

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Abstract

There is described a semiconductor device having a storage node capacitor structure suitable for rendering memory cells compact, and storage nodes are prevented from tilting. The device includes a storage node which has a vertical surface extending in the direction perpendicular to the surface of a semiconductor substrate, and a dielectric film for tilt prevention purposes which is brought into close contact with the side surface of the vertical surface and which prevents the vertical surface from tilting.

Claims3

Dependent claims

A method of manufacturing a semiconductor device having a storage node and a dielectric film for tilt prevention purposes, wherein the storage node has a vertical surface which extends in the direction perpendicular to the surface of a semiconductor substrate, and wherein the dielectric film is brought into close contact with the side surface of the vertical surface and prevents the vertical surface from tilting, the method comprising the sequential steps of:

forming a first dielectric layer over the substrate;
forming a storage node contact extending through the first dielectric layer to the substrate;
forming a second dielectric layer over the first dielectric layer;
forming a cylindrical space in the second dielectric layer;
forming in the cylindrical space the storage node having the vertical surface;
and
forming a dielectric film for tilt preventing purpose which prevents the vertical surface from tilting by etching the second dielectric layer to a film thickness after formation of the vertical surface, said film thickness being determined such that the storage node assumes a desired capacity, wherein the step for forming the cylindrical space comprises the steps of:
forming signal lines on the surface of the first dielectric layer;
forming a third dielectric layer from a third dielectric material so as to cover the surface of the signal lines;
forming a fourth dielectric layer from a fourth dielectric material, which differs from the third dielectric material, so as to cover the third dielectric layer;
forming the second dielectric layer from a second dielectric material, which differs from the fourth dielectric material, so as to cover the fourth dielectric layer;
etching an area where the cylindrical space is to be formed, by means of a measure suitable for removing the second dielectric material and for conserving the fourth dielectric material;
and
etching an area where the cylindrical space is to be formed, by means of a measure suitable for removing the fourth dielectric material and for conserving the third and second dielectric materials.

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Dependencies are inferred from the claim text.

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Abstract

forming a first dielectric layer over the substrate;
forming a storage node contact extending through the first dielectric layer to the substrate;
forming a second dielectric layer over the first dielectric layer;
forming a cylindrical space in the second dielectric layer;
forming in the cylindrical space the storage node having the vertical surface;
and
forming a dielectric film for tilt preventing purpose which prevents the vertical surface from tilting by etching the second dielectric layer to a film thickness after formation of the vertical surface, said film thickness being determined such that the storage node assumes a desired capacity, wherein the step for forming the cylindrical space comprises the steps of:
forming signal lines on the surface of the first dielectric layer;
forming a third dielectric layer from a third dielectric material so as to cover the surface of the signal lines;
forming a fourth dielectric layer from a fourth dielectric material, which differs from the third dielectric material, so as to cover the third dielectric layer;
forming the second dielectric layer from a second dielectric material, which differs from the fourth dielectric material, so as to cover the fourth dielectric layer;
etching an area where the cylindrical space is to be formed, by means of a measure suitable for removing the second dielectric material and for conserving the fourth dielectric material;
and
etching an area where the cylindrical space is to be formed, by means of a measure suitable for removing the fourth dielectric material and for conserving the third and second dielectric materials.

11 more elements