Method of forming a capacitor structure and DRAM circuitry having a capacitor structure including interior areas spaced apart from one another in a non-overlapping relationship

A method of forming DRAM circuitry comprising:

• providing a substrate comprising at least two conductive lines and a node location disposed between two adjacent conductive lines of the at least two conductive lines;
• forming a first contact structure disposed between the two adjacent conductive lines, the first contact structure being joined with the node location therebetween;
• forming a second contact structure joined with the first contact structure, the second structure elevationally above the first structure and extending laterally outward therefrom, overlying at least a portion of each of the two adjacent conductive lines;
• forming a conductive layer of material disposed over and in electrical communication with a second contact structure, the layer of material having an outer surface with first and second spaced apart regions;
• forming a first container over and in electrical communication with the first region;
• forming a second container over and in electrical communication with the second region;
• and
• forming a dielectric layer and a conductive capacitor electrode layer disposed operably proximate the first and second containers.

A method of forming DRAM circuitry comprising:

• providing a substrate having first and second spaced apart node locations, the first node location being disposed between a first pair of conductive lines and the second node location being disposed between a second pair of conductive lines;
• forming a first contact structure in electrical communication with the first node location, at least a portion of the first contact structure overlying a portion of the first pair of conductive lines;
• forming a second contact structure in electrical communication with the second node location, at least a portion of the second contact structure overlying a portion of the second pair of conductive lines;
• forming a first storage capacitor in electrical communication with the first contact structure and comprising first and second containers;
• forming a second storage capacitor in electrical communication with the second contact structure and comprising third and fourth containers, wherein the first, second, third, and fourth containers define container volumes which are discrete and separated from one another;
• and
• forming a dielectric layer and conductive capacitor electrode layer disposed operably proximate the first and second storage capacitors.

A method of forming a capacitor comprising:

• providing a substrate comprising a conductive node location disposed between two conductive lines;
• forming a contact structure joined with the at least one conductive node location and overlying at least a portion of each of the two conductive lines;
• forming a conductive layer over the contact structure, the conductive layer electrically joined with the conductive node location through the contact strucutre;
• photolithographically defining and subsequently forming a first container of a first portion of the conductive layer and a second container of a second portion of the conductive layer, the first and the second container being spaced apart from one another in a non-overlapping manner;
• and
• forming a capacitor dielectric layer and a conductive capacitor electrode layer disposed operably proximate the first and the second containers.