Method of manufacturing semiconductor device using heated conveyance member
AssigneeFujitsu Limited
InventorsTakao Ohno, Koichi Meguro, Shigeru Kamada, Keisuke Fukuda, Yuzo Shimobeppu
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AssigneeFujitsu Limited
InventorsTakao Ohno, Koichi Meguro, Shigeru Kamada, Keisuke Fukuda, Yuzo Shimobeppu
Estimating the term…
A semiconductor device is manufactured by an integrated circuit forming process, and a series of subsequent steps. In the series of steps, a protection tape 18 is adhered onto a first surface of a semiconductor substrate on which a plurality of semiconductor elements are formed, and the second surface of the semiconductor substrate is ground so that the semiconductor substrate has a desired thickness, the semiconductor substrate is then conveyed while controlling the temperature of the semiconductor substrate. The semiconductor substrate is then separated into a plurality of semiconductor elements. The occurrence of warping on the semiconductor substrate during conveyance of the semiconductor substrate is thus prevented.
A method of manufacturing a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.