Method of manufacturing semiconductor device for evaluation capable of evaluating crystal defect using in-line test by avoiding using preferential etching process

Abstract

In order to obtain a method of evaluating a crystal defect which allows crystal defects generated in a thin film SOI layer or a thin film surface layer to be evaluated using an in-line test, an SOI layer 3 has silicide regions 8 formed in the evaluation region consequently upon generation of crystal defects generated in the SOI layer 3. The silicide regions 8 are regions silicided as a result of the crystal defects having gettered metals which are contained in a transition layer 10 and diffuse into the SOI layer 3 upon a heat treatment. A laser beam is irradiated to the evaluation region via the transition layer 10 and the silicon oxide film 6. By monitoring a current flowing between first and second probes using an ampere meter while scanning the evaluation region with a laser beam, it is possible to evaluate the crystal defects in the evaluation region.

Dependencies are inferred from the claim text.