Polymer, resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTsunehiro Nishi, Koji Hasegawa, Takeshi Kinsho
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AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTsunehiro Nishi, Koji Hasegawa, Takeshi Kinsho
Estimating the term…
A polymer comprising recurring units of formula (1) wherein R1 is H or methyl, R2 is H or C1-8 alkyl, R3 is hydrogen or CO2R4, and R4 is C1-15 alkyl and recurring units having a carboxylic acid protected with an acid-decomposable protecting group containing an adamantane or tetracyclo-[4.4.0.12,5.17,10]dodecane structure and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV.
A polymer comprising recurring units of the following general formula (1) and recurring units having a carboxylic acid protected with an acid-decomposable protecting group containing an adamantane structure or tetracyclo-[4.4.0.12,5.17,10]dodecane structure, the polymer having a weight average molecular weight of 1,000 to 500,000,
Dependencies are inferred from the claim text.
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The macromolecular compound being present in a chemically amplified positive photoresist composition: the macromolecular compound having a…
The macromolecular compound being present in a chemically amplified positive photoresist composition: the macromolecular compound having an…
Photosensitive materials: with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Photomechanical production of textured or patterned surfaces
Term ended 6 Jul 2022 (estimated)
This invention relates to (i) a polymer comprising specific recurring units, (ii) a resist composition comprising the polymer as a base resin, and (iii) a patterning process using the resist composition.
While a number of recent efforts are being made to achieve a finer pattern rule in the drive for higher integration and operating speeds in LSI devices, deep-ultraviolet lithography is thought to hold particular promise as the next generation in microfabrication technology. In particular, photolithography using a KrF or ArF excimer laser as the light source is strongly desired to reach the practical level as the micropatterning technique capable of achieving a feature size of 0.3 μm or less.
For resist materials for use with a KrF excimer lasers, polyhydroxystyrene having a practical level of transparency and etching resistance is, in fact, a standard base resin. For resist materials for use with ArF excimer lasers, polyacrylic or polymethacrylic acid derivatives containing an adamantane structure in their side chain are often used as described in JP-A 9-73173 and JP-A 9-90637. Few of these polymers are regarded as exhibiting satisfactory performance.
Synthesis Examples and Examples are given below by way of illustration and not by way of limitation. The abbreviation Mw is a weight average molecular weight as measured by GPC using a polystyrene standard, and SEM is scanning electron microscope.
Polymers within the scope of the invention were synthesized by the following procedure.
A mixture of 112.0 g of 3-oxo-2,7-dioxatricyclo-[4.2.1.04,8]nonan-9-yl methacrylate, 117.0 g of 2-methyl-2-adamantyl methacrylate, 1.40 g of 2-mercaptoethanol, and 763.3 g of tetrahydrofuran was heated at 60° C. To the solution was added 3.28 g of 2,2′-azobisisobutyronitrile. The solution was stirred for 15 hours while keeping at 60° C. The reaction solution was cooled to room temperature and dissolved in 500 ml of acetone, which with vigorous stirring, was added dropwise to 10 liters of isopropyl alcohol. The resulting solids were collected by filtration and dried in vacuum at 40° C. for 15 hours, obtaining a polymer in white powder solid form. The amount was 183.9 g and the yield was 80.3%. This is designated Polymer 1.