Antimony-based heterostructure varactor diode with bandgap engineered quantum well electrodes

An antimony-based quantum heterostructure barrier varactor diode wherein the diode is comprised of five layers, where the first layer is comprised of GaInAs, the antimony based heterojunction barrier is comprised of three of the layers, with the first barrier layer comprised of AlAsSb, the second barrier layer is comprised of AlSb, and the third barrier layer is comprised of AlAsSb, and wherein the fifth layer is comprised of GaInAs“whereby the layer structure of the varactor diode is provided to maximize the variation of capacitance with voltage at high frequencies”.