High resistivity silicon wafer having electrically inactive dopant and method of producing same

A method for producing a silicon wafer which retains high-resistivity throughout device fabrication heat treatment, comprising:

• growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 10 to 40 ppma by the Czochralski method while
• doping the silicon single crystal ingot with nitrogen,
• processing the silicon single crystal ingot into a high-resistivity wafer having opposed first and second surfaces,
• subjecting the high-resistivity wafer to an initial oxygen precipitation heat treatment,
• contacting a second silicon wafer to the first surface of the high-resistivity wafer via a thin oxide film, and
• subjecting the wafers to a final oxygen precipitation heat treatment, thereby
• reducing the residual interstitial oxygen concentration in the high-resistivity wafer to 8 ppma or less, and
• bonding the high-resistivity wafer and second wafer to form a single silicon on insulation (SOI) wafer.