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US 6,670,256 B2Granted
Metal oxynitride capacitor barrier layer
AssigneeMicron Technology, Inc.
InventorsSam Yang, Vishnu K. Agarwal
Life of this patent
Estimating the term…
Abstract
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxynitride barrier layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxynitride barrier layer acts to reduce undesirable oxidation of its associated electrode. Each metal oxynitride barrier layer can further aid in the repairing of oxygen vacancies in a metal oxide dielectric. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.
Claims43
A method of forming a capacitor, comprising:
- forming an insulating layer on a substrate;
- forming an opening in the insulating layer, wherein the opening has a bottom portion overlying an exposed portion of the substrate and sidewall portions defined by the insulating layer;
- forming a bottom electrode layer overlying the insulating layer, the exposed portion of the substrate and the sidewall portions;
- depositing a first metal oxynitride baffler layer overlying the bottom electrode layer;
- forming a dielectric layer overlying the first metal oxynitride baffler layer;
- depositing a second metal oxynitride baffler layer overlying the dielectric layer;
- forming a top electrode layer overlying the second metal oxynitride baffler layer;
- and
- patterning the top electrode layer, second metal oxynitride baffler layer, dielectric layer, first metal oxynitride barrier layer and bottom electrode layer, thereby defining the capacitor.
6 more elements
A method of forming a capacitor, comprising:
- forming an insulating layer on a substrate;
- forming an opening in the insulating layer, wherein the opening has a bottom portion overlying an exposed portion of the substrate and sidewall portions defined by the insulating layer;
- forming a bottom electrode layer overlying the insulating layer, the exposed portion of the substrate and the sidewall portions;
- depositing a metal oxynitride barrier layer overlying the bottom electrode;
- forming a dielectric layer overlying the first metal oxynitride barrier layer;
- forming a top electrode layer overlying the dielectric layer;
- and patterning the top electrode layer, dielectric layer, metal oxynitride barrier layer and bottom electrode layer, thereby defining the capacitor.
4 more elements
A method of forming a capacitor, comprising:
- forming an insulating layer on a substrate;
- forming an opening in the insulating layer, wherein the opening has a bottom portion overlying an exposed portion of the substrate and sidewall portions defined by the insulating layer;
- forming a bottom electrode layer overlying the insulating layer, the exposed portion of the substrate and the sidewall portions;
- forming a dielectric layer overlying the bottom electrode layer;
- depositing a metal oxynitride barrier layer overlying the dielectric layer;
- forming a top electrode layer overlying the metal oxynitride barrier layer;
- and
- patterning the top electrode layer, metal oxynitride barrier layer, dielectric layer and bottom electrode layer, thereby defining the capacitor.
5 more elements
A method of forming a capacitor, comprising:
- forming a bottom electrode layer;
- depositing a first tungsten oxynitride barrier layer overlying the bottom electrode layer;
- forming a dielectric layer overlying the first tungsten oxynitride baffler layer;
- depositing a second tungsten oxynitride barrier layer overlying the dielectric layer;
- and
- forming a top electrode layer overlying the second tungsten oxynitride baffler layer.
3 more elements
A method of forming a capacitor, comprising:
- forming-a bottom electrode layer;
- depositing a tungsten oxynitride baffler layer overlying the bottom electrode layer;
- forming a dielectric layer overlying the tungsten oxynitride baffler layer;
- and
- forming a top electrode layer overlying the dielectric layer.
2 more elements
A method of forming a capacitor, comprising:
- forming a bottom electrode layer;
- forming a dielectric layer overlying the bottom electrode layer;
- depositing a tungsten oxynitride baffler layer overlying the dielectric layer;
- and
- forming a top electrode layer overlying the tungsten oxynitride baffler layer.
2 more elements
A method of forming a capacitor, comprising:
- forming a bottom electrode layer, wherein the bottom electrode layer comprises a metal nitride having a metal component;
- depositing a first metal oxynitride baffler layer overlying the bottom electrode layer, wherein the first metal oxynitride baffler layer comprises a metal oxynitride having a composition of the form MOxNy, wherein M is a metal component selected from the group consisting of chromium, cobalt, hathium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium;
- forming a metal oxide dielectric layer overlying the first metal oxynitride baffler layer;
- depositing a second metal oxynitride baffler layer overlying the dielectric layer, wherein the second metal oxynitride baffler layer comprises a metal oxynitride having a composition of the form M′Ox′N′y, wherein M′ is a metal component selected from the group consisting of chromium, cobalt, hafnium, iridium, molybdenum, niobium, osmium, rhenium, rhodium, ruthenium, tantalum, titanium, tungsten, vanadium and zirconium;
- forming a top electrode layer overlying the second metal oxynitride barrier layer, wherein the top electrode layer comprises a metal nitride having a metal component;
- and
- patterning the top electrode layer, second metal oxynitride barrier layer, dielectric layer, first metal oxynitride barrier layer and bottom electrode layer, thereby defining the capacitor.
4 more elements
A method of forming a capacitor, comprising:
- forming a bottom electrode layer;
- depositing a first metal oxynitride barrier layer overlying the bottom electrode layer;
- forming a dielectric layer overlying the first metal oxynitride barrier layer;
- depositing a second metal oxynitride barrier layer overlying the dielectric layer;
- and forming a top electrode layer overlying the second metal oxynitride barrier layer.
2 more elements
A method of forming a capacitor, comprising:
- forming a bottom electrode layer;
- depositing a metal oxynitride barrier layer overlying the bottom electrode layer;
- forming a dielectric layer overlying the metal oxynitride barrier layer;
- and
- forming a top electrode layer overlying the dielectric layer.
2 more elements
A method of forming a capacitor, comprising:
- forming a bottom electrode layer;
- forming a dielectric layer overlying the bottom electrode layer;
- depositing a metal oxynitride barrier layer overlying the dielectric layer;
- and
- forming a top electrode layer overlying the metal oxynitride baffler layer.
2 more elements
A method of forming a capacitor, comprising:
- forming a bottom electrode layer comprising a metal nitride;
- depositing a metal oxynitride passivation layer on the bottom electrode layer;
- forming a dielectric layer on the metal oxynitride passivation layer;
- forming a top electrode layer overlying the dielectric layer;
- and
- patterning the top electrode layer, dielectric layer, metal oxynitride passivation layer and bottom electrode layer, thereby defining the capacitor.
3 more elements
A method of forming a capacitor, comprising:
- forming a bottom electrode layer comprising a metal nitride;
- depositing a metal oxynitride passivation layer on the bottom electrode layer;
- forming a tantalum oxide dielectric layer on the metal oxynitride passivation layer;
- forming a top electrode layer overlying the dielectric layer;
- and
- patterning the top electrode layer, dielectric layer, metal oxynitride passivation layer and bottom electrode layer, thereby defining the capacitor.
3 more elements
A method of forming a capacitor, comprising:
- forming a bottom electrode layer comprising a tungsten nitride;
- depositing a tungsten oxynitride passivation layer on the bottom electrode layer;
- forming a dielectric layer on the tungsten oxynitride passivation layer;
- forming a top electrode layer overlying the dielectric layer;
- and
- patterning the top electrode layer, dielectric layer, tungsten oxynitride passivation layer and bottom electrode layer, thereby defining the capacitor.
3 more elements
A method of forming a capacitor, comprising:
- forming a bottom electrode layer comprising a tungsten nitride;
- depositing a tungsten oxynitride passivation layer on the bottom electrode layer;
- forming a tantalum oxide layer on the tungsten oxynitride passivation layer;
- forming a top electrode layer overlying the tantalum oxide layer;
- and
- patterning the top electrode layer, tantalum oxide layer, tungsten oxynitride passivation layer and bottom electrode layer, thereby defining the capacitor.
3 more elements
Dependencies are inferred from the claim text.