Formation method of pattern

A formation method of a pattern comprising:

• forming a first photoresist layer of a positive type on a substrate;
• performing a first exposure to light and development by exposure light having a predetermined wavelength using a inversion mask having an opening at a site at which a pattern is desired to be formed finally, thereby forming an opening portion in the first photoresist layer to expose the substrate at the site;
• applying a second photoresist layer, formed of a material which absorbs exposure light for the first exposure, on an entire surface of the substrate including the first photoresist layer, so that the second photoresist layer is embedded in the opening portion but does not fill the opening portion;
• etching back an entire surface of the second photoresist layer on the first photoresist layer until the first photoresist layer is exposed;
• and
• exposing to light and developing an entire surface of the first photoresist layer and an entire surface of the second photoresist layer by exposure light having the same wavelength as that of the exposure light used in the formation of the opening portion, to remove the first photosensitive layer, thereby obtaining the second photoresist layer with the desired pattern.

A formation method of a pattern, the method comprising:

• forming a photoresist layer of a positive type on a substrate;
• exposing and developing the photoresist layer using an inversion mask having an opening at a site at which a pattern is desired to be formed, thereby forming an opening portion in the photoresist layer to expose the substrate at the site;
• applying a non-photosensitive organic film, formed of a material that absorbs light which can expose the photoresist layer, on a surface of the substrate including the photoresist layer, so that the non-photosensitive organic film is embedded in the opening portion but does not completely fill the opening portion;
• etching back a surface of the non-photosensitive organic film on the photoresist layer until the photoresist layer is exposed;
• exposing to light and developing a surface of the photoresist layer to remove the photoresist layer, thereby obtaining the non-photosensitive organic film having the desired pattern;
• and
• wherein the non-photosensitive organic film comprises a polymer compound film including a light absorbing material and is used as an anti-reflection film.