Mask pattern creating method and mask pattern creating apparatus
AssigneeCanon Kabushiki Kaisha
InventorsMitsuro Sugita, Tetsunobu Kochi
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AssigneeCanon Kabushiki Kaisha
InventorsMitsuro Sugita, Tetsunobu Kochi
Estimating the term…
A method for creating a mask pattern used in multiple exposure for carrying out overlay printing of a micro-line pattern and a mask pattern a minimum line width of which is wider than a line width of the micro-line pattern to form a target pattern having a minimum line width corresponding to the line width of the micro-line pattern, the method having: a step of preparing data of the target pattern desired to form after the exposure; a step of carrying out a logical operation of predetermined micro-line pattern data and the target pattern data; a step of dividing a surface of the mask pattern into plural types of areas, based on the result of the logical operation; a step of setting a single light transmittance or a plurality of light transmittances required or allowed for the types of areas and grouping areas for which one light transmittance can be selected, in each light transmittance; and a step of synthesizing a synthetic pattern from grouped patterns formed in the respective light transmittances, wherein data of the synthetic pattern is used as data of the mask pattern.
A method for creating a mask pattern projected on a substrate in multiple exposure for carrying out overlay printing of a micro-line pattern and a mask pattern a minimum line width of which is wider than a line width of the micro-line pattern and which provides multi-level exposure amount onto the substrate, so as to form a target pattern, said method comprising:
A method for creating a mask pattern used in multiple exposure for carrying out overlay printing of a micro-line pattern and a mask pattern a minimum line width of which is wider than a line width of the micro-line pattern to form a target pattern having a minimum line width corresponding to the line width of said micro-line pattern, said method comprising:
A method for creating a mask pattern used in multiple exposure for carrying out overlay printing of a micro-line pattern and a mask pattern a minimum line width of which is wider than a line width of the micro-line pattern to form a target pattern having a minimum line width corresponding to the line width of said micro-line pattern, said method comprising:
A method for creating a mask pattern projected onto a substrate comprising:
A mask pattern creating method comprising:
A pattern computing method wherein multiple image computing means carries out an operation, using micro-line pattern data prepared by micro-line pattern handling means, arbitrary rough pattern data prepared by rough pattern handling means, and a characteristic parameter for a pattern forming operation inputted by characteristic parameter handling means, and outputs forming pattern data of the result of the operation to forming pattern handling means, wherein the rough pattern data provides multi-level exposure amount distribution on a wafer.
A pattern computing method wherein, using data from either three handling means out of data from four handling means including micro-line pattern data prepared by micro-line pattern handling means, arbitrary rough pattern data prepared by rough pattern handling means, a characteristic parameter for a pattern forming operation inputted by characteristic parameter handling means, and final forming pattern data prepared by forming pattern handling means, one rest data is computed and outputted, wherein the rough pattern data provides multi-level exposure amount distribution on a wafer.
Dependencies are inferred from the claim text.