Method of synthesizing metal doped diamond-like carbon films
AssigneeUniversity of Louisville
InventorsMayumi Ueno, Mahendra Kumar Sunkara
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Abstract
A method of synthesizing metal doped carbon films by placing a substrate in a chamber with a selected amount of a metalorganic compound. An electron cyclotron resonance is applied to the chamber in order to vaporize the metalorganic compound. The resonance is applied to the chamber until a metal doped carbon film is formed. The metalorganic compound is preferably selected from the group consisting of an organic salt of ruthenium, palladium, gold or platinum.
Claims26
A method of controlling the formation of a nanostructured metal doped carbon film comprising a diamond-like sp3 carbon structure containing nanometer sized metal clusters embedded in an amorphous carbon matrix by electron cyclotron resonance chemical vapor deposition, comprising the steps of:
- placing a substrate in a chamber;
- maintaining said substrate temperature at a selected temperature;
- introducing a ruthenium compound in said chamber near a plasma discharge as a precursor gas;
- heating and vaporizing said precursor gas to increase the vapor pressure to maintain at least a minimum selected flow rate near the substrate by applying an electron cyclotron resonance to said chamber;
- generating, applying, and maintaining a selected pressure;
- generating and applying a RF bias of less than −200 volts;
- producing a ruthenium doped film containing diamond-like metal nanocrystallite clusters within an amorphous carbon matrix having a mean grain size averaging 5 nm in diameter based on measurements on 50-100 grains.
A method of controlling the formation of a nanostructured metal doped carbon film comprising a diamond-like sp3 carbon structure containing nanometer sized metal clusters embedded in an amorphous carbon matrix by electron cyclotron resonance chemical vapor deposition, comprising the steps of:
- placing a substrate in a chamber;
- maintaining said substrate temperature at a selected temperature;
- introducing a metalorganic compound is said chamber near a plasma discharge as a precursor gas, wherein said metalorganic compound is selected from the group consisting of a metal or an organic salt of ruthenium, palladium, gold, and platinum;
- heating and vaporizing said precursor gas to increase the vapor pressure to maintain at least a minimum selected flow rate near the substrate by applying an electron cyclotron resonance to said chamber;
- generating and applying and maintained a selected pressure;
- generating and applying a RF bias of less than −200 volts;
- producing a metal doped film containing diamond-like metal nanocrystallite clusters within an amorphous carbon matrix.
Dependencies are inferred from the claim text.