High resistivity silicon wafer produced by a controlled pull rate czochralski method

A method for producing a silicon wafer which retains high-resistivity throughout a device heat treatment, comprising:

• growing a silicon single crystal ingot having a resistivity of 100 Ω·cm or more and an initial interstitial oxygen concentration of 10 to 40 ppma by the Czochralski method with a ratio of pull rate (v) to axial temperature gradient (G) at the molten silicon solid silicon interface of about 1×10−5 cm2/s·K to about 5×10−5 cm2/s·K
• processing the silicon single crystal ingot into a high-resistivity wafer opposed first and second surfaces,
• subjecting the high-resistivity wafer to an initial oxygen precipitation heat treatment,
• contacting a second silicon wafer to the first surface of the high-resistivity wafer via a thin oxide film, and
• subjecting the wafers to a final oxygen precipitation heat treatment, thereby
• reducing the residual interstitial oxygen concentration in the high-resistivity wafer to 8 ppma or less, and
• bonding the high-resistivity wafer and second wafer to form a single silicon on insulation (SOI) wafer.