ESD protection device
AssigneeWinbond Electronics Corp.
InventorsWei-Fan Chen, Shi-Tron Lin
Life of this patent
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Abstract
An electrostatic discharge (ESD) protection device has a semiconductor bulk of a first conductivity type, a first doped region of a second conductivity type formed in the semiconductor bulk, a second doped region of a second conductivity type formed in the semiconductor bulk, a channel region formed between the first doped region and the second doped region, a plurality of contacts formed on the first doped region, and a well of the second conductivity type formed in the semiconductor bulk and positioned between the channel and the contacts.
Claims32
An electrostatic discharge (ESD) protection device, comprising:
- a semiconductor bulk of a first conductivity type;
- a first doped region of a second conductivity type formed in the semiconductor bulk;
- a second doped region of a second conductivity type formed in the semiconductor bulk;
- a channel region formed between the first doped region and the second doped region;
- a plurality of contacts formed on the first doped region;
- and
- a well of the second conductivity type formed in the semiconductor bulk and positioned between the channel and the contacts.
An electrostatic discharge (ESD) protection device, comprising:
- a semiconductor bulk of a first conductivity type;
- a first doped region of a second conductivity type formed in the semiconductor bulk;
- a second doped region of a second conductivity type formed in the semiconductor bulk;
- a stripe of field oxide formed between the first and the second doped regions;
- a plurality of contacts formed on the first doped region;
- and
- a well of the second conductivity type on the semiconductor bulk and positioned between the stripe of field oxide and the contacts.
An electrostatic discharge (ESD) protection device, comprising:
- a semiconductor bulk of a first conductivity type;
- a first doped region of a second conductivity type formed in the semiconductor bulk;
- a second doped region of a second conductivity type formed in the semiconductor bulk;
- a first channel region and a second channel region, with the first and second channel regions formed between the first doped region and the second doped region;
- a plurality of contacts formed on the first doped region;
- and
- a well of the second conductivity type on the semiconductor bulk and positioned between the channel regions and the contacts.
Dependencies are inferred from the claim text.