Back to results
US 6,664,579 B2Granted
Magnetic random access memory using bipolar junction transistor
AssigneeHynix Semiconductor Inc.
InventorsChang Shuk Kim, Hee Bok Kang, Sun Ghil Lee
Life of this patent
Estimating the term…
Abstract
A magnetic random access memory (MRAM) having an MTJ cell located between a word line and a gate oxide film, a reference voltage line in a source junction region, and a connection line in a drain junction region. The constitution and fabrication process of the MRAM are simplified to improve productivity and properties of the device.
Claims8
A magnetic random access memory (MRAM) comprising:
- a word line;
- a gate oxide film;
- and
- a variable resistance device disposed between the word line and the gate oxide film and engaging both the word line and the gate oxide film.
1 more element
A magnetic random access memory (MRAM) comprising:
- a semiconductor substrate;
- source/drain junction (S/D) regions disposed in an active region of the semiconductor substrate with a channel region disposed on top of the substrate between the S/D regions;
- a stacked structure comprising a gate oxide film, an MTJ cell of an island type and a word line, the stacked structure positioned over the channel region wherein the stacked structure overlies and engages the channel region and overlies and engages portions of the S/D regions or overlies and engages only the channel region;
- a reference voltage line in contact with the source junction region;
- and a bit line in contact with the drain junction region.
2 more elements
Dependencies are inferred from the claim text.