GaInP stacked layer structure and field-effect transistor manufactured using the same
AssigneeShowa Denko K.K.
InventorTakashi Udagawa
Life of this patent
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Abstract
A GaInP stacked layer structure 1 having a GaAs single crystal substrate 10 having stacked on the surface thereof at least a buffer layer 11, an electron channel layer 12 composed of GaXIn1-XAs (0≦X≦1), a spacer layer 13 composed of GaInP and an electron supply layer 14 composed of GaInP is disclosed. The electron channel layer 12 contains a compositional gradient region imparted with a gradient by increasing the indium composition ratio (1-X) in the direction of the layer thickness increasing toward the junction interface 12b with the electron supply layer 14 side.
Claims13
A GaInP stacked layer structure comprising a GaAs single crystal substrate having stacked on the surface thereof at least a buffer layer, an electron channel layer composed of GaxIn1-xAs (0≦x≦1), a spacer layer composed of GazIn1-zP (0≦z≦1), and an electron supply layer composed of GayIn1-yP (0≦y≦1),
- wherein said electron channel layer has a compositional gradient region where the indium composition ratio (1-X) increases toward the electron supply layer side and said electron channel layer is composed of n-type GaxIn1-xAs (0≦x≦1) having added thereto boron.
A GaInP stacked layer structure comprising a GaAs single crystal substrate having stacked on the surface thereof at least a buffer layer, an electron channel layer composed of GaxIn1-xAs (0≦x≦1), and an electron supply layer composed of GayIn1-yP (0≦y≦1),
- wherein said electron channel layer has a compositional gradient region where the indium composition ration (1-X) increases toward the electron supply layer side and said electron channel layer is composed of n-type GaxIn1-xAs (0≦x≦1) having added thereto boron.
Dependencies are inferred from the claim text.