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US 6,664,574 B2Granted
Heterojunction semiconductor device and method of manufacturing
AssigneeSemiconductor Components Industries, LLC
InventorsMisbahul Azam, Gary Loechelt, Julio Costa
Life of this patent
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Abstract
A semiconductor component (100) includes a semiconductor substrate (16) that is formed with trench (27). A semiconductor layer (20) is formed in the trench for coupling a control signal (VB) through a sidewall (25) of the trench to route a current (Ic) through a bottom surface (23) of the trench.
Claims17
A semiconductor component, comprising:
- a semiconductor substrate formed with a first semiconductor material to define a trench;
- and
- a semiconductor layer formed in the trench with a second semiconductor material for coupling a control signal through a sidewall of the trench to route a current through a bottom surface of the trench, wherein the semiconductor layer has a substantially polycrystalline structure along the sidewall and a substantially monocrystalline structure along the bottom surface of the trench.
A semiconductor device comprising:
- a substrate formed with a first semiconductor material and having a recessed region;
- a first layer formed with a second semiconductor material along a sidewall and a bottom surface of the recessed region;
- a control electrode electrically coupled to the first layer through the sidewall of the recessed region to control a current of the semiconductor device through the bottom surface of the recessed region;
- and
- an emitter region made of the first semiconductor material and forming a first junction with the first layer.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate formed with a trench;
- a first layer formed in the trench and having a first region with a monocrystalline structure and a second region with a crystalline structure different from the monocrystalline structure;
- a second layer formed on the substrate adjacent to the second region of the first layer for controlling a current that flows through the first region to a bottom surface of the trench.
Dependencies are inferred from the claim text.