Back to results
US 6,664,188 B2Granted
Semiconductor wafer with a resistant film
OwnerTerence M. Thomasinventor
Life of this patent
Estimating the term…
Abstract
A semiconductor wafer adapted for planarization by polishing the wafer with a polishing pad and a polishing fluid, the wafer having a metal layer, and a resistant film formed selectively on low topography features of the metal layer to resist the polishing fluid while high topography features of the metal layer are removed by said polishing, which minimizes a time duration for attaining planarization of the wafer by said polishing.
Claims10
A method of planarizing a semiconductor wafer comprising the steps of:
- shielding the semiconductor wafer to form a resistant film selectively on low topography features of a metal layer of the semiconductor wafer in relation to high topography features of the metal layer of the semiconductor wafer to resist chemical reaction and dissolution of a polishing fluid at the low topography features of the metal layer of the semiconductor wafer;
- and
- polishing the metal layer with a polishing pad and with the polishing fluid to chemically react and dissolve the high topography features at a faster removal rate than the low topography features and to attain planarization of the semiconductor wafer with a reduced polishing time.
A method of planarizing a semiconductor wafer comprising the steps of:
- shielding the semiconductor wafer to form a resistant film selectively on low topography features of a copper layer of the semiconductor wafer in relation to high topography features of the copper layer of the semiconductor wafer to resist chemical reaction and dissolution of a polishing fluid at the low topography features of the copper layer of the semiconductor wafer;
- and
- polishing the copper layer with a polishing pad and with the polishing fluid to chemically react and dissolve the high topography features at a faster removal rate than the low topography features and to attain planarization of the semiconductor wafer with a reduced polishing time.
Dependencies are inferred from the claim text.