Method for fabricating semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorKenshi Kanegae
Life of this patent
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Abstract
A peeling film is deposited on an insulating film, which is formed on a semiconductor substrate and has a hole, and on the bottom and the wall of the hole so as not to fill the hole with the peeling film. A resist film is formed over the peeling film so as to fill the hole. A resist pattern is formed by patterning the resist film so as to form an interconnect groove opening around the hole and to allow a portion of the resist film to remain within the hole. The peeling film and the insulating film are etched by using the resist pattern as a mask, so as to form an interconnect groove continuous with the hole in the insulating film. After removing the resist pattern, a remaining portion of the peeling film is removed.
Claims24
A method for fabricating a semiconductor device comprising the steps of:
- depositing a peeling film on an insulating film, which is formed on a semiconductor substrate and has a hole, and on a bottom and a wall of said hole in such a manner that said hole is not filled with said peeling film;
- forming a resist film over said peeling film in such a manner that said hole is filled with said resist film;
- forming a resist pattern from said resist film by patterning said resist film in such a manner that an interconnect groove opening is formed around said hole and that a portion of said resist film remains within said hole;
- forming an interconnect groove continuous with said hole in said insulating film by etching said peeling film and said insulating film with said resist pattern used as a mask;
- and
- removing a remaining portion of said peeling film after removing said resist pattern.
A method for fabricating a semiconductor device comprising the steps of:
- depositing a peeling film on an insulating film, which is formed on a semiconductor substrate and has a hole, and on a bottom and a wall of said hole in such a manner that said hole is not filled with said peeling film;
- forming an organic film on a portion of said peeling film within said hole;
- forming a resist pattern from a resist film, which is formed on said peeling film and said organic film, by patterning said resist film in such a manner that an interconnect groove opening is formed around said hole;
- forming an interconnect groove continuous with said hole in said insulating film by etching said peeling film and said insulating film with said resist pattern used as a mask;
- and
- removing a remaining portion of said peeling film after removing said resist pattern and said organic film.
A method for fabricating a semiconductor device comprising the steps of:
- depositing a peeling film on an insulating film, which is formed on a semiconductor substrate and has a hole, and on a bottom and a wall of said hole in such a manner that said hole is not filled with said peeling film;
- forming an organic film over said peeling film in such a manner that said hole is filled with said organic film;
- forming a resist pattern from a resist film, which is formed on said organic film, by patterning said resist film in such a manner that an interconnect groove opening is formed around said hole;
- forming an interconnect groove continuous with said hole in said insulating film by etching said peeling film and said insulating film with said resist pattern used as a mask;
- and
- removing a remaining portion of said peeling film after removing said resist pattern and said organic film.
Dependencies are inferred from the claim text.