Semiconductor device and method for fabricating the same
AssigneesFujitsu Limited, Electro Scientific Industries, Inc.
InventorsTaiji Ema, Edward J. Swenson, Thomas W. Richardson, Yunlong Sun
Life of this patent
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Abstract
The semiconductor device includes a blocking layer 12 formed on a substrate 10, an insulation film 14 formed on the blocking layer 12, and a fuse 22 formed on the insulation film 14. The blocking layer 12 is formed below the fuse 22, whereby the fuse is disconnected by laser ablation, and the laser ablation can be stopped by the blocking layer 12 with good controllability without damaging the substrate. The fuses to be disconnected can be arranged at a very small pitch, which can improve integration of the fuse circuit.
Claims12
A method for fabricating a semiconductor device comprising the steps of:
- forming a first insulation film over a substrate;
- forming a blocking layer on the first insulation film, the blocking layer being for preventing the first insulation film and/or the substrate from ablating when a laser beam is irradiated;
- forming a second insulation film on the blocking layer;
- forming a fuse on the second insulation film;
- forming a cover film for covering the fuse;
- and
- disconnecting the fuse by laser ablation, the cover film being removed with disconnecting the fuse by laser ablation.
A method for fabricating a semiconductor device including a memory cell region where a plurality of memory cells are formed, and a fuse circuit region where a fuse circuit for replacing a defective memory cell by a redundant memory cell is formed, comprising the steps of:
- forming a blocking layer over the base semiconductor substrate in the fuse circuit region, the blocking layer being for preventing the semiconductor substrate from ablating when a laser beam is irradiated;
- forming an insulation film on the blocking layer;
- forming a fuse on the insulation film, the fuse being formed of the same conducting layer as a conducting layer forming the memory cells or an interconnection layer formed in the memory cell region;
- forming a cover film for covering the fuse;
- and
- disconnecting the fuse by laser ablation, the cover film being removed with disconnecting the fuse by laser ablation.
A method for fabricating a semiconductor device including a memory cell region where a plurality of memory cells are formed, and a fuse circuit region where a fuse circuit for replacing a defective memory cell by a redundant memory cell is formed, comprising the steps of:
- forming a layer or layers over the base semiconductor substrate;
- forming a fuse on the layer or layers, the fuse being formed of the same conducting layer as a conducting layer forming the memory cells or an interconnection layer formed in the memory cell region;
- forming a cover film for covering the fuse;
- and
- disconnecting the fuse by laser ablation so as to stop the laser ablation at the layer or the layers, the cover film being removed with disconnecting the fuse by laser ablation.
A method for fabricating a semiconductor device comprising the steps of:
- forming a first insulation film over a substrate;
- forming a blocking layer including a tungsten film on the first insulation film, the blocking layer being for preventing the first insulation film and/or the substrate from ablating when a laser beam is irradiated;
- forming a second insulation film on the blocking layer;
- forming on the second insulation film a fuse including an aluminum film or an aluminum alloy film;
- forming a cover film for covering the fuse;
- and disconnecting the fuse by laser ablation, the cover film being removed with disconnecting the fuse by laser ablation.
Dependencies are inferred from the claim text.