Method of alloying a semiconductor device
AssigneeMicron Technology, Inc.
InventorsFernando Gonzalez, Thomas A. Figura, J. Brett Rolfson
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Abstract
A method for alloying a semiconductor substrate upon which wordlines enclosed in spacers have been formed, with the substrate exposed between the wordlines. A thin sealing layer is deposited over the substrate and the wordlines, the sealing layer helping to maintain the alloy in said substrate. The alloying material employed in the substrate is hydrogen and optionally monatomic hydrogen. Alloying the substrate with monatomic hydrogen may also be done after deposition of a metal layer, or at other process steps as desired.
Claims19
A method for alloying a semiconductor device, the method comprising:
- providing a semiconductor substrate with at least one electrical device formed thereon;
- alloying the semiconductor substrate through an exposed surface on the semiconductor substrate in an atmosphere comprising hydrogen;
- and
- forming, after the alloying and with no intervening fabrication step, a sealing layer comprising silicon nitride over the semiconductor substrate and the at least one electrical device, the sealing layer assisting in retaining in the semiconductor substrate the hydrogen introduced through the exposed surface on the semiconductor substrate.
A method for alloying a semiconductor device, the method comprising:
- providing a silicon substrate with at least one electrical device formed thereon;
- alloying the silicon substrate through an exposed surface on the silicon substrate in an atmosphere comprising monatomic hydrogen;
- and
- forming, after alloying and with no intervening fabrication step, a sealing layer comprising silicon nitride over the silicon substrate and the at least one electrical device, the sealing layer assisting in retaining in the silicon substrate the monatomic hydrogen introduced through the exposed surface on the silicon substrate.
Dependencies are inferred from the claim text.