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US 6,664,168 B1Granted
Method of making an on-die decoupling capacitor for a semiconductor device
AssigneeIntel Corporation
InventorsEbrahim Andideh, R. Scott List
Life of this patent
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Abstract
A method of making an on-die decoupling capacitor for a semiconductor device is described. That method comprises forming a first barrier layer on a conductive layer. The upper surface of the first barrier layer is modified to enable a dielectric layer with an acceptable nucleation density to be formed on the first barrier layer. A dielectric layer is formed on the first barrier layer, and a second barrier layer is formed on the dielectric layer.
Claims3
A method of making an on-die decoupling capacitor for a semiconductor device comprising:
- forming a first barrier layer on a copper containing layer, the first barrier layer having an upper surface;
- modifying the upper surface of the first barrier layer by exposing the upper surface to a reactive gas that is selected from the group consisting of silane, germane, and nitrous oxide;
- forming a dielectric layer on the first barrier layer;
- and
- forming a second barrier layer on the dielectric layer.
2 more elements
Dependencies are inferred from the claim text.