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US 6,664,162 B2Granted
Method of manufacturing capacitor
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMasakazu Okada
Life of this patent
Estimating the term…
Abstract
An isolation oxide film (2) has a recess. The bottom of the recess is below the upper surfaces of a P well (21) and an N well (22). A capacitor is provided on the bottom of the recess.
Claims14
A method of manufacturing a capacitor, comprising the steps of:
- (a) forming a trench in a surface of a substrate;
- (b) forming an insulation film filling said trench;
- (c) selectively removing said insulation film to form an isolating insulation film in said trench, said isolating insulation film having a recess on an opposite side from said substrate, said recess having a bottom deeper than said surface of said substrate;
- and
- (d) forming a lower electrode on said bottom such that a width of said bottom is greater than a width of said lower electrode, a dielectric layer on said lower electrode, and an upper electrode on said dielectric layer.
2 more elements
Dependencies are inferred from the claim text.