US 6,664,119 B2 · Chemical vapor deposition method for manufacturing semiconductor devices

Abstract

There is provided a method of optimizing recipe of in-situ cleaning process for process chamber after a specific process on semiconductor wafers by using Residual Gas Analyzer Quadrupole Mass Spectrometer (RGA-QMS) According to the present invention, a Chemical Vapor Deposition (CVD) apparatus for manufacturing semiconductor devices comprises: a process chamber; process gas supply line for supplying process gas into the process chamber; a waste-gas exhaust line for removing the waste-gas from the process chamber after process; a supply line for supplying a ClF3 gas into the process chamber; a sampling manifold for sampling the gas inside process chamber by using pressure difference; and RGA-QMS for analyzing the sampling gas, and the optimization of the end points according to gas flow, pressure, and temperature of the cleaning process for the process chamber is achieved through the analysis by above RGA-QMS.

Claims4

Dependent claims

A method of forming a semiconductor device comprising the steps of:

providing a process chamber having an interior surface;
providing a workpiece in the process chamber;
forming a first layer of material on the workpiece;
forming a second layer of material on the interior surface of the process chamber;
selectively etching in situ the second layer with a gas comprising ClF3;
monitoring a process chamber gas composition, wherein the gas composition includes a first layer etching by-product and a second layer etching by-product;
and
determining an end point detection when a concentration of the first layer etching by-product equals a concentration of the second layer etching by-product.

5 more elements

Dependencies are inferred from the claim text.

Chemical vapor deposition method for manufacturing semiconductor devices

Life of this patent

Chemical vapor deposition method for manufacturing semiconductor devices

Life of this patent

Abstract

Claims4