Process for forming photoresist pattern by using gas phase amine treatment
AssigneeHynix Semiconductor Inc.
InventorsJae Chang Jung, Cha Won Koh, Jin Soo Kim, Sung Eun Hong, Keun Kyu Kong, Ki Ho Baik
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Abstract
A process for producing a photoresist pattern is disclosed. In particular, the disclosed process for forming a photoresist pattern reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.
Claims12
A process for forming a photoresist pattern comprising the steps of treating an exposed photoresist substrate with ammonia gas under conditions sufficient to produce a substantially vertical photoresist pattern prior to developing the pattern.
A process for forming a photoresist pattern, comprising the steps of:
- (a) coating a photoresist composition on a substrate to produce a coated substrate;
- (b) exposing said coated substrate to light using an exposer to produce an exposed substrate;
- (c) treating said exposed substrate with ammonia gas to produce a treated substrate;
- and
- (d) developing said treated substrate to produce said photoresist pattern, wherein said step of treating exposed substrate results in production of a substantially vertical photoresist pattern.
Dependencies are inferred from the claim text.