Method of forming opening in wafer layer
AssigneeUnited Microelectronics Corp.
InventorsJiunn-Ren Hwang, I-Hsiung Huang
Life of this patent
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Abstract
A method of forming an opening in a wafer layer. At least two patterned photoresist layers are formed on a wafer layer. Using different photoresist layers, many openings are defined. The wafer layer is then etched to form the opening. Each photoresist layer has a parallel linear pattern such as parallel strips or an array of rectangular blocks. The photoresist layers are superposed in a way that spaces between the patterns for each photoresist layers overlapped with each other for form openings that expose the underlying wafer layers. The wafer layer exposed in the openings is then etched to form contact/via holes without rounded corners while the rounded profiles has been cancelled by the superposition of the photoresist layers.
Claims20
A method of forming an opening in a wafer layer on a substrate, comprising:
- forming a first photoresist layer with a plurality of first linear patterns spaced with each other with a first pitch on the wafer layer;
- forming a second photoresist layer with a plurality of second linear patterns spaced with each other with a second pitch, wherein a material of the second photoresist layer is different from a material of the first photoresist layer;
- and wherein
- the second photoresist layer is formed on the first photoresist layer in a way that the second linear patterns are perpendicularly crossing over the first linear patterns, such that the openings are formed penetrating through the first and the second photoresist layers by superposition of the spaces between the first and second linear patterns;
- forming a plurality of contact/via holes in the wafer layer by removing the wafer layer exposed by the openings.
A method of forming an opening in a wafer layer on a substrate, comprising:
- forming a first photoresist layer with a pattern of an array of a plurality of first blocks on the wafer layer;
- forming a second photoresist layer with a pattern of an array of a plurality of second blocks on the first photoresist layer, wherein the second blocks are staggered on the first blocks, so that a plurality openings are formed penetrating through the first and the second photoresist layers to expose the wafer layer;
- and
- etching the wafer layer exposed by the openings.
A method of forming an opening in a wafer layer on a substrate, comprising:
- forming a first photoresist layer with at least two adjacent first rectangular blocks on the wafer layer, wherein the two adjacent first rectangular blocks with four rounding corners are laid in a first direction;
- forming a second photoresist layer with at least two adjacent second rectangular blocks on the first photoresist layer, wherein the two adjacent second rectangular blocks with four rounding corners are laid in a second direction orthogonal to the first direction, and first adjacent rounding corners of the two adjacent first rectangular blocks are covered by one of the two adjacent second rectangular blocks and second rounding adjacent corners of the two adjacent first rectangular blocks are covered by the other second rectangular block, so that at least one opening is formed to penetrate through the first and the second photoresist layers to expose the wafer layer;
- and
- etching the wafer layer exposed to by the opening.
Dependencies are inferred from the claim text.