Methods of characterizing device performance based upon the duration of an endpointed photoresist develop process, and system for accomplishing same

A method, comprising:

• initiating a develop process on an exposed layer of photoresist formed above a wafer;
• indicating an endpoint of said develop process;
• determining a duration of said endpoint develop process;
• and
• predicting an electrical performance characteristic of an integrated circuit device to be formed on said wafer based upon said determined duration.

A method, comprising:

• initiating a develop process on an exposed layer of photoresist formed above a wafer;
• indicating an endpoint of said develop process;
• determining a duration of said endpoint develop process;
• determining if said determined duration of said develop process is not within a preselected range;
• indicating an error condition if said determined duration is not within said preselected range;
• and
• adjusting a thickness of a layer of photoresist formed above a subsequently processed wafer if said determined duration is not within said preselected range.

A method, comprising:

• initiating a develop process on an exposed layer of photoresist formed above a wafer;
• indicating an endpoint of said develop process;
• determining a duration of said endpoint develop process;
• determining if said determined duration of said develop process is not within a preselected range;
• and
• adjusting a thickness of a layer of photoresist formed above a subsequently processed wafer if said determined duration is not within said preselected range.

A method, comprising:

• initiating a develop process on an exposed layer of photoresist formed above a wafer;
• indicating an endpoint of said develop process;
• determining a duration of said endpoint develop process;
• determining if said determined duration of said develop process is not within a preselected range;
• and
• adjusting at least one parameter of a stepper exposure process to be performed on a layer of photoresist formed above a subsequently processed wafer if said determined duration is not within said preselected range.

A method, comprising:

• initiating a develop process on an exposed layer of photoresist formed above a wafer;
• indicating an endpoint of said develop process;
• determining a duration of said endpoint develop process;
• determining if said determined duration of said develop process is not within a preselected range;
• indicating an error condition if said determined duration is not within said preselected range;
• and
• adjusting at least one parameter of a stepper exposure process to be performed on a layer of photoresist formed above a subsequently processed wafer if said determined duration is not within said preselected range.

A method, comprising:

• initiating a develop process on an exposed layer of photoresist formed above a wafer;
• indicating an endpoint of said develop process;
• determining a duration of said endpoint develop process;
• determining if said determined duration of said develop process is not within a preselected range;
• indicating an error condition if said determined duration is not within said preselected range;
• and
• adjusting at least one parameter of a process operation performed on said processed wafer after said develop process has been performed if said determined duration is not within acceptable limits.