Equipment for UV wafer heating and photochemistry
AssigneeFSI International, Inc.
InventorsRobert T. Fayfield, Brent Schwab
Life of this patent
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Abstract
The apparatus of the present invention provides for the dual use of a UV source to heat a substrate and to facilitate photochemistry necessary for the treatment of the substrate. The present invention also provides a method for processing a substrate by heating the substrate to a temperature above ambient via UV radiation at a first power level and conditioning the substrate by exposing the substrate to a photochemically (UV) reactive chemical, or a reactive chemical that can react with a compound on the surface of the substrate to form a photochemically reactive compound, in the presence of UV radiation at a second power level.
Claims15
A method for performing a UV photochemical treatment on a semiconductor substrate, the substrate having a front side and back side, comprising:
- at least one heating step in which UV radiation at a heating power is provided to the substrate from a UV radiation supply system comprising at least one UV radiation source to heat the substrate;
- and
- at least one reaction step in which is non-concurrent with said heating step and in which UV radiation at a reactive power is provided from the UV radiation supply system, the UV radiation provided in the reaction step interacting with at least one photochemically reactive chemical, which is present on the surface of the substrate, causing a chemical reaction effecting a treatment of the substrate,
- wherein the UV radiation supply system delivers to at least a portion of the surface of the substrate a first total radiative power density integrated from 0.1 to 1.0 microns of wavelength during the at least one heating step and a second total radiatve power density integrated form 0.1 to 1.0 of wavelength during the at least one reaction step, and the first total radiative power density exceeds the second total radiative power density.
A method for performing a UV photochemical treatment on a secmiconductor substrate, the substrate having a front side and back side, comprising:
- at least one heating step in which UV radiation at a heating power is provided to the substrate to heat the substrate;
- and
- at least one non-concurrent reaction step in which UV radiation at a reactive power is provided, the UV radiation interacting with at least one photochemically reactive chemical causing a chemical reaction effecting a treatment of the substrate,
- wherein the UV radiation provided to at least a portion of the surface of the substrate has a total radiative power density integrated from 0.1 to 1.0 microns of wavelength of at least 0.3 watts/cm2 during the at least one heating step and the power delivered to the substrate in the at least one heating step exceeds the power delivered to the substrate in the at least one reaction step.
A method for performing a UV photochemical treatment on a semiconductor substrate, the substrate having a front side and back side, comprising:
- at least one heating step in which UV radiation at a heating power is provided to the substrate from a UV radiation supply system comprising at least one UV radiation source to heat the substrate;
- and
- at least one reaction step in which UV radiation at a reactive power is provided form the UV radiation supply system, the UV radiation provided in the reaction step interacting with at least one photochemically reactive chemical, which is present on the surface of the substrate, causing a chemical reaction effecting a treatment of the substrate,
- wherein the UV radiation supply system delivers to at least a portion of the surface of the substrate a first total radiative power density integrated from 0.1 to 1.0 microns of wavelength during the at least on heating step and a second total radiative power density integrated from 0.1 to 1.0 microns of wavelength during the at least one reaction step, and the first total radiative power density exceeds the second total radiative power density and the UV radiation is provided to the front side and back side of the substrate.
A method for performing a UV photochemical treatment on a semiconductor substrate, the substrate having a front side and back side, comprising:
- at least one heating step in which UV radiation at a heating power is provided to the substrate to heat the substrate;
- and
- at least one reaction step in which UV radiation at a reactive power is provided the UV radiation interacting with at least one photochemically reactive chemical causing a chemical reaction effecting treatment of the substrate,
- wherein the UV radiation provided to at least a portion of the surface of the substrate has a total radiative power density integrated from 0.1 to 1.0 microns of wavelength of at least 0.3 watts/cm2 during the at least one heating step and the power delivered to the substrate in the at least one heating step exceeds the power delivered to the substrate in the at least one reaction step and the UV radiation is provided to the front side and back side of the substrate.
Dependencies are inferred from the claim text.