Vapor drying for cleaning photoresists

A method of cleaning a patterned photoresist clad structure comprising

• contacting the patterned photoresist clad structure with an alcohol vapor comprising at least one compound having the Formula ROH, wherein R is a hydrocarbon group comprising from 5 to about 8 carbon atoms, wherein the alcohol vapor is an ultradry alcohol vapor and ultrapurified alcohol vapor comprising no particles having a size larger than about 3 microns, less than about 5 parts per billion of any trace metal, ion, or compound, and less than about 700 parts per million water and the patterned photoresist comprises an organic polymeric material;
• condensing the alcohol vapor on the patterned photoresist clad structure;
• and
• removing the condensed alcohol vapor from the patterned photoresist clad structure.

A method of cleaning a patterned photoresist clad structure comprising

• contacting the patterned photoresist clad structure with an alcohol vapor comprising at least one compound having the Formula ROH, wherein R is a hydrocarbon group comprising from 5 to about 8 carbon atoms, wherein the alcohol vapor is an ultradry alcohol vapor and ultrapurified alcohol vapor comprising no particles having a size larger than about 3 microns, less than about 5 parts per billion of any trace metal, ion, or compound, and less than about 700 parts per million water, the patterned photoresist comprises an organic polymeric material, and the patterned photoresist clad structure comprises one of a 157 nm sensitive photoresist, a 193 nm sensitive photoresist, an I-line photoresist, an H-line photoresist, a G-line photoresist, an E-line photoresist, a deep UV photoresist, an extreme UV photoresist, an X-ray resist, and an electron beam resist;
• condensing the alcohol vapor on the patterned photoresist clad structure;
• and
• removing the condensed alcohol vapor from the patterned photoresist clad structure.