MOSFET driver matching circuit for an enhancement mode JFET
AssigneeLovoltech, Inc.
InventorDaniel Chang
Life of this patent
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Abstract
A matching circuit for coupling a conventional metal-oxide semiconductor field effect transistor (MOSFET) driver to the gate of a junction field effect transistor (JFET). A driver circuit optimized for driving a MOSFET is combined with a matching circuit to provide gate drive for a JFET. The matching circuit comprises a resistor and capacitor in parallel. For driving enhancement mode JFETs having a gate grid array structure and a pinch-off voltage greater than 0.4 volts, the range of resistor values is 10 to 200 ohms, and the range of capacitor values is 1 to 100 nF. For devices having a pinch-off voltage less than 0.4 volts, the range of resistor values is 100 to 2000 ohms. The matching circuit may further include a diode to provide a bias.
Claims22
A switching circuit comprising;
- a metal-oxide semiconductor field effect transistor (MOSFET) driver having a signal input, a supply voltage input, and an output;
- an enhancement mode junction field effect transistor (JFET) having a gate, a source and a drain;
- and
- a matching circuit comprising a capacitor and a resistor coupled in parallel, wherein said matching circuit is coupled to said output and also coupled to said gate.
A matching circuit for coupling a driver circuit optimized for a MOSFET to the gate of an enhancement mode JFET, said matching circuit comprising a capacitor coupled in parallel with a resistor.
A power conditioning circuit comprising:
- a driver circuit optimized for a MOSFET having a signal input and an output;
- an enhancement mode junction field effect transistor (JFET) having a gate, a source and a drain;
- and
- a matching circuit comprising a capacitor and a resistor coupled in parallel, wherein said matching circuit is coupled to said output and also coupled to said gate.
Dependencies are inferred from the claim text.