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US 6,661,079 B1Granted
Semiconductor-based spiral capacitor
AssigneeNational Semiconductor Corporation
InventorSimon Bikulcius
Life of this patent
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Abstract
Increased capacitance per unit of area with reduced series resistance and inductance is provided by a semiconductor-based capacitor with a spiral shape. The capacitor utilizes a plurality of patterned metal layers that each have a first trace with a spiral shape and a second trace with a spiral shape. The second trace is formed between the loops of the first trace, and around the first trace.
Claims20
A capacitor formed on a semiconductor material of a first conductivity type, the capacitor including:
- a first layer of isolation material formed on the semiconductor material;
- a first metal trace formed on the first layer of isolation material, the first metal trace having a first center point, a first end point, and a spiral shape with loops that extends away from the first center point to the first end point;
- and
- a second metal trace formed on the first layer of isolation material, the second metal trace having a second center point, a second end point, and a spiral shape with loops that extends away from the second center point to the second end point, the second metal trace being formed between the loops of the first metal trace, and around the first metal trace.
1 more element
A capacitor formed on a semiconductor material of a first conductivity type, the capacitor including:
- a plurality of layers of isolation material formed over the semiconductor material, a first layer of isolation material being formed on the semiconductor material, other than the first layer of isolation material, each layer of isolation material being formed on a preceding layer of isolation material;
- a plurality of spaced apart metal layers corresponding to the plurality of layers of isolation material, each metal layer being formed on a corresponding layer of isolation material and having a first metal trace and a second metal trace,
- the first metal trace having a first center point, a first end point, and a spiral shape with loops that extends away from the first center point to the first end point;
- and
- the second metal trace having a second center point, a second end point, and a spiral shape that extends away from the second center point to the second end point, the second metal trace being formed between the loops of the first metal trace, and around the first metal trace;
- and
- a plurality of vias formed in the second and greater layers of isolation material, the vias making electrical connections between each vertically adjacent first metal trace, and each vertically adjacent second metal trace.
4 more elements
Dependencies are inferred from the claim text.