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US 6,661,074 B2Granted
Receiver comprising a variable capacitance diode
AssigneeKoninklijke Philips Electronics N.V.
InventorsBernhard Bollig, Hans Martin Ritter
Life of this patent
Estimating the term…
Abstract
A receiver for radio or television signals provided with a high-frequency circuit having a discrete semiconductor component which includes a planar variable capacitance diode and an integrated series resistor formed on a common semiconductor or substrate. The receiver has lower parasitic capacitance and improved data reception, resulting in an increase of the Q factor of the variable capacitance diode and an increase in the circuit performance. The overall circuit loss is also reduced.
Claims9
A receiver for radio or television signals provided with a high-frequency circuit comprising a discrete semiconductor component,
- which includes a planar variable capacitance diode formed on a semiconductor substrate of a first doping type with a first doping density n1, on which semiconductor substrate an epitaxial layer of the same doping type with a second doping density n2>n1 is provided, on which epitaxial layer an insulation layer having a first window is provided, and a first laterally bounded semiconductor region of a second doping type with a doping density n3>n2 in the epitaxial layer is provided below the first window, and a first contact pad which contacts the first laterally bounded semiconductor region via the first window,
- which semiconductor component further includes an integrated series resistor composed of a resistor path on the insulation layer, and a second contact pad, which is arranged on the insulation layer and contacts the resistor path, and a second laterally bounded semiconductor region in the epitaxial layer, below the second-contact pad and the resistor path, said second laterally bounded semiconductor region extending across an entire thickness of the epitaxial layer and having a doping of the second doping type with a doping density n4, which substantially compensates for the doping of the first doping type with a doping density n2 of the epitaxial layer.
A discrete semiconductor component,
- which comprises a planar variable capacitance diode formed on a semiconductor substrate of a first doping type with a first doping density n1, on which semiconductor substrate an epitaxial layer of the same doping type with a second doping density n2>n1 is provided, on which epitaxial layer an insulation layer having a first window is provided, and a first laterally bounded semiconductor region of a second doping type with a doping density n3>n2 in the epitaxial layer is provided below the first window, and a first contact pad which contacts the first laterally bounded semiconductor region via the first window,
- which semiconductor component further includes an integrated series resistor composed of a resistor path on the insulation layer, and a second contact pad, which is arranged on the insulation layer and contacts the resistor path, and a second laterally bounded semiconductor region in the epitaxial layer, below the second contact pad and the resistor path, said second laterally bounded semiconductor region having a doping of the second doping type with a doping density n4, which substantially compensates for the doping of the first doping type with a doping density n2 of the epitaxial layer, wherein a sum of the charge earner concentrations n4 and n2 is below 1016/cm3.
A discrete semiconductor component,
- which comprises a planar variable capacitance diode formed on a semiconductor substrate of a first doping type with a first doping density n1, on which semiconductor substrate an epitaxial layer of the same doping type with a second doping density n2>n1 is provided, on which epitaxial layer an insulation layer having a first window is provided, and a first laterally bounded semiconductor region of a second doping type with a doping density n3>n2 in the epitaxial layer is provided below the first window, and a first contact pad which contacts the first laterally bounded semiconductor region via the first window,
- which semiconductor component further includes an integrated series resistor composed of a resistor path on the insulation layer, and a second contact pad, which is arranged on the insulation layer and contacts the resistor path, and a second laterally bounded semiconductor region in the epitaxial layer and extending across an entire thickness of the epitaxial layer, below the second-contact pad and the resistor path, said second laterally bounded semiconductor region having a doping of the second doping type with a doping density n4, which substantially compensates for the doping of the first doping type with a doping density n2 of the epitaxial layer.
Dependencies are inferred from the claim text.