Process for etching an organic dielectric using a silyated photoresist mask
AssigneeAdvanced Micro Devices, Inc.
InventorsScott A. Bell, Todd P. Lukanc, Christopher F. Lyons, Marina V. Plat, Ramkumar Subramanian
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Abstract
A process for forming a semiconductor device may comprise forming an organic dielectric layer on a substrate, forming a protective layer on the organic dielectric layer, forming a photoresist mask on the protective layer, and silyating the photoresist mask. The protective layer is etched using the silyated photoresist mask as an etch mask, and then the organic dielectric layer is etched using the silyated photoresist mask as an etch mask. Metal may be deposited in a void etched in the organic dielectric layer to form a wiring, contact or via.
Claims15
A process for forming a semiconductor device comprising:
- forming an organic dielectric layer on a substrate;
- forming a protective layer on the organic dielectric layer;
- forming a photoresist mask on the protective layer;
- silyating the photoresist mask;
- etching the protective layer using the silyated photoresist mask as an etch mask;
- and
- etching the organic dielectric layer to form a void in the organic dielectric layer using the silyated photoresist mask as an etch mask.
Dependencies are inferred from the claim text.