Toxic residual gas removal by non-reactive ion sputtering
AssigneeChartered Semiconductor Manufacturing Ltd.
InventorsZou Zheng, Zhou Mei Sheng, Yelehanka Ramachandramurthy Pradeep, Paul Proctor
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Abstract
A novel method to remove residual toxic gases trapped by a polymerizing process by an inert ion sputter is described. A masking layer is formed overlying a semiconductor substrate. An opening is etched through the masking layer into the semiconductor substrate whereby a polymer forms on sidewalls of the opening and whereby residual toxic gas reactants from gases used in the etching step are adsorbed by the polymer. Thereafter, the polymer is sputtered with non-reactive ions whereby the residual toxic gas reactants are desorbed from the polymer to complete removal of residual toxic gas reactants in the fabrication of an integrated circuit device.
Claims24
A method of removing residual toxic gas reactants from a sidewall polymer in the fabrication of an integrated circuit device comprising:
- forming a masking layer overlying a semiconductor substrate;
- etching an opening through said masking layer into said semiconductor substrate whereby a polymer forms on sidewalls of said opening and whereby residual toxic gas reactants from gases used in said etching step are adsorbed by said polymer;
- and
- thereafter sputtering said polymer with non-reactive ions wherein said sputtering transfers energy to said polymer whereby said residual toxic gas reactants are desorbed from said polymer and wherein said sputtering does not physically remove said polymer or any part of said substrate to complete said removing of said residual toxic gas reactants in the fabrication of said integrated circuit device.
A method of removing residual toxic gas reactants from a sidewall polymer in the fabrication of an integrated circuit device comprising:
- forming a masking layer overlying a semiconductor substrate;
- in an etching chamber, etching an opening through said masking layer into said semiconductor substrate whereby a polymer forms on sidewalls of said opening and whereby residual toxic gas reactants from gases used in said etching step are adsorbed by said polymer;
- and
- immediately thereafter within same said etching chamber, sputtering said polymer with non-reactive ions wherein said sputtering transfers energy to said polymer whereby said residual toxic gas reactants are desorbed from said polymer and wherein said sputtering does not physically remove said polymer or any part of said substrate to complete said removing of said residual toxic gas reactants in the fabrication of said integrated circuit device.
A method of removing residual toxic gas reactants from a sidewall polymer in the fabrication of an integrated circuit device comprising:
- forming a masking layer overlying a semiconductor substrate;
- in an etching chamber, etching an opening through said masking layer into said semiconductor substrate whereby a polymer forms on sidewalls of said opening and whereby residual toxic gas reactants from gases used in said etching step are adsorbed by said polymer;
- and
- immediately thereafter within same said etching chamber, sputtering said polymer with non-reactive ions wherein said sputtering transfers energy to said polymer whereby said residual toxic gas reactants are desorbed from said polymer and whereby said residual toxic gas reactants are desorbed from walls of said etching chamber and wherein said sputtering does not physically remove said polymer or any part of said substrate to complete said removing of said residual toxic gas reactants in the fabrication of said integrated circuit device.
Dependencies are inferred from the claim text.