Dual damascene metal interconnect structure with dielectric studs
AssigneeAdvanced Micro Devices, Inc.
InventorsSuzette K. Pangrle, Lynne A. Okada, Fei Wang
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Abstract
A method for forming a dual damascene conductive line and conductive plug using porous low k dielectric materials in the via and trench layers. The via layer is provided with dense low k dielectric plugs that increase the mechanical strength of the porous low k dielectric layer that forms the via layer. A via fill technique etches some of the dielectric plugs in the via layer and fills them with conductive material. The via fill technique reduces the damage done to the via holes in the via layer caused by photoresist removal processes.
Claims13
A method of forming a metal interconnect structure, comprising the steps of:
- forming a first porous low k dielectric layer on a substrate;
- forming dielectric studs in the first porous low k dielectric layer, the dielectric studs comprising dense low k dielectric material;
- forming a second porous low k dielectric layer on the first porous dielectric layer;
- etching a trench in the second porous low k dielectric layer and a via in the first porous low k dielectric layer, wherein the via is etched from one of the dielectric studs and the trench is located over the via;
- and
- simultaneously depositing conductive material in the via and the trench to form a conductive plug and line.
Dependencies are inferred from the claim text.