Method and device for forming an STI type isolation in a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsChul-Sung Kim, Si-Young Choi, Jung-Woo Park, Jong-Ryol Ryu, Byeong-Chan Lee
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Abstract
A trench isolation in a semiconductor device, and a method for fabricating the same, includes: forming a trench having inner sidewalls for device isolation in a silicon substrate; forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench; supplying healing elements to the silicon substrate to remove dangling bonds; and filling the trench with a device isolation layer, thereby forming the trench isolation without dangling bonds causing electrical charge traps.
Claims22
A method for manufacturing a trench isolation on a silicon substrate, comprising:
- forming a trench area for device isolation in the silicon substrate, wherein the trench has inner sidewalls;
- forming an oxide layer on a surface of the silicon substrate that forms the inner sidewalls of the trench;
- subsequently supplying fluorine to the silicon substrate to remove dangling bonds at an interface of the oxide layer and the trench inner sidewall surface;
- and
- filling the trench with a device isolation layer.
Dependencies are inferred from the claim text.