Method to form a corrugated structure for enhanced capacitance with plurality of boro-phospho silicate glass including germanium
AssigneeMicron Technology, Inc.
InventorsRandhir P. S. Thakur, Gordon Haller, Kirk D. Prall
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Abstract
A method of forming a corrugated capacitor on a semiconductor component. The method of forming the corrugated capacitor comprises a series of depositing alternating layers of doped silicon glass having different etch rates on a semiconductor component, covering the alternating layers with an etch-resistant material, and etching the alternating layers, thereby forming a capacitor structure having corrugated sides.
Claims21
A method of forming a corrugated capacitor structure for enhanced capacitance on a substrate having a contact, comprising:
- forming a first layer of doped silicate glass having a first composition over at least a portion of said contact;
- forming a second layer of doped silicate glass having a second composition different than said first composition of said first layer of doped silicate glass over at least a portion of said first layer of doped silicate glass, said second layer of doped silicate glass including germanium boro-phospho silicate glass;
- forming an etch-resistant layer over at least a portion of said second layer of doped silicate glass;
- and
- etching said first layer of doped silicate glass and said second layer of doped silicate glass to form a contact opening having a side wall in said first layer of doped silicate glass and said second layer of doped silicate glass, said side wall of said contact opening having a corrugated surface.
A method of forming a corrugated capacitor structure for enhanced capacitance for a substrate having a contact area comprising:
- depositing a plurality of layers of insulating material over at least a portion of said contact area of said substrate, said plurality of layers of insulating material including a plurality of first layers of boro-phospho silicate glass and a plurality of second layers of germanium boro-phospho silicate glass, each first layer of said plurality of first layers of boro-phospho silicate glass having a portion thereof contacting a portion of a second layer of said plurality of second layers of germanium boro-phospho silicate glass, said plurality of first layers of boro-phospho silicate glass having a first etch rate and said plurality of second layers of germanium boro-phospho silicate glass having a second etch rate different than said first etch rate of said plurality of first layers of boro-phospho silicate glass;
- depositing an etch-resistant layer over said plurality of first layers of boro-phospho silicate glass and said plurality of second layers of germanium boro-phospho silicate glass;
- and
- etching said plurality of first layers of boro-phospho silicate glass and said plurality of second layers of germanium boro-phospho silicate glass to form a contact opening having a side wall in said plurality of first layers of boro-phospho silicate glass and said plurality of second layers of germanium boro-phospho silicate glass, said side wall of said contact opening having a corrugated surface.
A method of forming a corrugated capacitor structure on a wafer having an array of contacts, comprising:
- forming alternating layers of boro-phospho silicate glass and germanium boro-phospho silicate glass having a stacked configuration of overlaying layers by chemical vapor deposition upon said array of contacts of said wafer;
- forming an etch-resistant layer over at least a portion of an upper layer of said alternating layers of boro-phospho silicate glass and germanium boro-phospho silicate glass;
- and
- exposing at least one contact of said array of contacts having alternating layers of boro-phospho silicate glass and germanium boro-phospho silicate glass formed thereon to an etchant for etching said alternating layers of boro-phospho silicate glass and germanium boro-phospho silicate glass to form a capacitor cell having a corrugated side wall.
Dependencies are inferred from the claim text.