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US 6,660,578 B1Granted
High-K dielectric having barrier layer for P-doped devices and method of fabrication
AssigneeAdvanced Micro Devices, Inc.
InventorsOlov Karlsson, Qi Xiang, HaiHong Wang, Bin Yu, Zoran Krivokapic
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Abstract
A semiconductor device, a semiconductor wafer and a method of forming a semiconductor wafer where a barrier layer is used to inhibit P-type ion-penetration into a dielectric layer made from a high-K material.
Claims7
A method of fabricating a wafer having a section for P-type doped semiconductor devices, comprising:
- providing a layer of semiconductor material;
- forming a high-K dielectric material layer on the layer of semiconductor material;
- forming a layer of barrier material on the high-K dielectric material layer and patterning the layer of barrier material to be coextensive with the section for P-type doped semiconductor devices;
- forming a layer of material to receive P-type doping on at least the layer of barrier material;
- and
- implanting the layer of material to receive P-type doping with P-type dopant and wherein the layer of barrier material inhibits P-type ion penetration into the high-K dielectric material layer during implantation;
- and
- wherein the layer of material to receive P-type doping is also formed on a section of the high-K dielectric material layer left exposed following patterning of the layer of barrier material, and the method further comprising masking a section of the layer of material to receive P-type doping formed on the high-K dielectric material prior to the implanting of P-type dopant.
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Dependencies are inferred from the claim text.