MOCVD of SBT using toluene-based solvent system for precursor delivery

#1. Field of the Invention

#This invention relates to metalorganic chemical vapor deposition (MOCVD) of strontium bismuth tantalate, and in particular to a toluene-based solvent system for precursor delivery for MOCVD of such material

#2. Description of the Related Art

#FIG. 1 is a graph of the growth rate of an SBT film as a function of liquid delivery rate for 9 Torr processes at 380° C. and 350° C. using 0.2M solution in 5:4:1 octane:decane:pmdeta.

#FIG. 2 is a graph of growth rate of an SBT film as a function of liquid delivery rate for 0.5M solution in 10:1 toluene:pmdeta at 380° C. and 9 Torr.

#FIG. 3 shows film incorporation efficiency of Sr, Bi and Ta, as a function of pressure (Torr) at 380° C. for precursor solutions of 10:1 toluene: pmdeta solvent containing the precursors Sr(thd)2-LBA, Bi(thd)3, and Ta(O-i-Pr)4(thd).

#The disclosures of the following U.S. patents and patent applications which are commonly owned by assignee of the present application, are hereby incorporated herein by reference in their entireties:

#U.S. patent application Ser. No. 08/835,768 filed Apr. 8, 1997 in the names of Thomas H. Baum, et al., now U.S. Pat. No. 5,919,522;

#U.S. patent application Ser. No. 08/484,654 filed Jun. 7, 1995 in the names of Robin A. Gardiner et al., now U.S. Pat. No. 6,110,529;