Staged aluminum deposition process for filling vias
AssigneeApplied Materials, Inc.
InventorsSang-Ho Yu, Yonghwa Chris Cha, Murali Abburi, Shri Singhvi, Fufa Chen
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AssigneeApplied Materials, Inc.
InventorsSang-Ho Yu, Yonghwa Chris Cha, Murali Abburi, Shri Singhvi, Fufa Chen
Estimating the term…
A semiconductor metallization process for providing complete via fill on a substrate, free of voids, and a planar metal surface, free of grooves. In one aspect, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A conformal PVD metal layer, such as Al or Cu, is then deposited onto the refractory layer at a pressure below about 1 milliTorr. The vias and/or contacts are then filled with metal, such as by reflowing additional metal deposited by physical vapor deposition on the conformal PVD metal layer. The process is preferably performed in an integrated processing system that includes a long throw PVD chamber, wherein a target and a substrate are separated by at least 100 mm, and a hot metal PVD chamber, also serving as a reflow chamber.
A method of forming a feature on a substrate, comprising:
A process for filling a via, trench, or dual damascene structure on a substrate, comprising:
A controller for a multi-chamber processing apparatus for performing physical vapor deposition processes, wherein the controller contains programming which, when executed, configures the controller to perform operations of forming a feature on a substrate, the operations comprising:
Dependencies are inferred from the claim text.