Method and apparatus for cleaning film deposition device
AssigneeTokyo Electron Limited
InventorMitsuhiro Tachibana
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AssigneeTokyo Electron Limited
InventorMitsuhiro Tachibana
Estimating the term…
This cleaning method and cleaning apparatus for a film deposition apparatus includes a processing container 4 accommodating a mounting table 10 for mounting an object W to be processed, a gas-introduction unit 52 for introducing a designated gas into the processing container, a vacuum exhausting system 36 for exhausting an atmosphere in the processing container in vacuum, and an automatic pressure regulating valve 42 interposed in the vacuum exhausting system so that a pressure in the processing container can be maintained at a constant value by changing an opening degree of the automatic pressure regulating valve. The cleaning method and cleaning apparatus further includes a cleaning-gas supplying unit 62 for supplying the gas-introduction unit with a cleaning gas, a valve-opening monitoring unit 64 for monitoring an opening degree of the automatic pressure regulating valve, a change detecting unit 66 for detecting a change in the opening degree on a basis of an output from the valve-opening monitoring unit 64 and a cleaning-end recognizing unit 68 for recognizing an end point of cleaning on a basis of an output from the change detecting unit 66. Consequently, the cleaning method and cleaning apparatus can detect the end point of an appropriate etching with ease.
A thermal cleaning method of a film deposition apparatus, for eliminating an unnecessary film adhering to the interior of a processing container of the film deposition apparatus by using a cleaning gas, the processing container forming a vacuum therein by a vacuum exhausting system, the method comprising the steps of:
A thermal cleaning apparatus of a film deposition apparatus, comprising:
A thermal cleaning apparatus of a film deposition apparatus, comprising:
Dependencies are inferred from the claim text.