US 6,660,096 B2Granted

Gas treatment apparatus

AssigneeTokyo Electron Limited

InventorsKazuhiro Takeshita, Shinji Nagashima, Yoji Mizutani, Kyoshige Katayama

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Abstract

A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.

Claims3

Dependent claims

A gas treatment apparatus, comprising:

a sealing vessel for holding a coated substrate;
a heating means for heating the inside of said sealing vessel so as to gelatinize the coating of the substrate;
a gas supplying path for supplying vapor of a solvent to said sealing vessel;
an exhausting path for exhausting gas out of said sealing vessel;
a first reservoir tank for reserving a solution of the solvent, bubbling the solution with a carrier gas, and supplying the vapor of the solvent to said sealing vessel through said gas supplying path;
a first temperature adjusting means for adjusting the temperature of the solution in said first reservoir tank to a predetermined temperature;
a second reservoir tank for replenishing the solution to said first reservoir tank when the amount of the solution in the first reservoir tank decreases;
and
a second temperature adjusting means for adjusting the temperature of the solution in said second reservoir tank to a predetermined temperature.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 09/735,627Filed 14 Dec 2000 · division
Priority: JP P10-0132187 Jan 1998
Published: US 2001/0000198 A112 Apr 2001
Granted: 9 Dec 2003
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10P 72/0402
Apparatus for manufacture or treatment: apparatus for fluid treatment
B05D 3/0453
The gas being a reactive gas: after-treatment
B05D 1/005
The substrate being rotated: spin coating
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered