Sic single crystal and method for growing the same
AssigneesSixon, Inc., Kansai Electric Power C.C., Inc., Mitsubishi Corporation
InventorsHiromu Shiomi, Tsunenobu Kimoto, Hiroyuki Matsunami
Life of this patent
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Abstract
A method of growing a 4H-poly type SiC single crystal 40, characterized in that the 4H-poly type SiC single crystal 40 is grown on a seed crystal 30 comprised of an SiC single crystal where a {03-38} plane 30u or a plane which is inclined at off angle α, within about 10°, with respect to the {03-38} plane, is exposed.
Claims7
A method of growing of 4H-poly type SiC single crystal, characterized in that a 4H-poly type SiC single crystal is grown on a seed crystal comprised of an SiC single crystal where a {03-38} plane, or a plane which is inclined at an angle α, within about 10°, with respect to the {03-38} plane, is exposed.
A method of growing an SiC single crystal for recrystallizing a 4H-poly type SiC single crystal on a seed crystal placed in a crucible made of graphite by sublimating SiC material powder in said crucible, characterized in that an SiC single crystal where a {03-38} plane, or a plane which is inclined at off angle α within about 10° with respect to the {03-38} plane, is exposed, is used as said seed crystal.
Dependencies are inferred from the claim text.